Language
HYG200N12NS1C2
The N-channel MOSFET in PDFN8L（5x6） package features VDS 120 V and RDS(on) 14.7 Ohm, using the SGTstructure technology. It is suitable for PD delivery, DC-DC and other application fields.
Features
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Low switch losses
Outstanding thermal and dissipation capability
High reliability
Stable technical capability
Applications
PD Delivery
DC-DC
