Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single N

HYG030N03LQ1C2

HYG030N03LQ1C2

The N-channel MOSFET in PDFN8L(5x6) package features VDS 30 V and RDS(on) 2.5 Ohm, using the Trench structure technology. It is suitable for battery management system and other application fields.

Features


Low RDS(on)

ROHS Compliant

100% DVDS Tested

100% UIL Tested





Benefits


Low conduction losses

Strong shock resistance

Outstanding thermal and dissipation capability

High reliability

High power density

Stable technical capability 





Applications


BMS   

HYG030N03LQ1C2

模型