Language
HYG024N03LR1C2
The N-channel MOSFET in PDFN8L（5x6） package features VDS 30 V and RDS(on) 1.1 Ohm, using the Trench structure technology. It is suitable for electronic speed controller, battery management system and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
BMS
Electronic Speed Controller
