Language
HYG170C03LR1D4
The N+P structure MOSFET in TO-252-4L package features VDS 30 V and RDS(on) 14/21.5 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as motor drives, DC-DC and other application fields.
Features
Low RDS(on)
Low input Capacitance
ROHS Compliant
100% DVDS Tested
100% UILTested
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
DC-DC
Motor Drives
Wireless Charging
