Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

MOSFET Third-Generation Semiconductor IPM IGBT Application Scheme

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Single N

MOSFET
Third-Generation Semiconductor
IPM
IGBT
Application Scheme

HYA026N08NS1C2

This is a 80V, 2.4mΩ, PDFN8L(5x6) package product，using trench structure technology, It is suitable for battery management system, motor drive and other application fields.

HYA026N08NS1C2Product Specification

特性

ROHS Compliant

100% DVDS Tested

100% UIL Tested

AEC-Q101 Qualified

优势

Strong shock resistance

High reliability

Stable technical capability

应用

battery management system, motor drive

HYA026N08NS1C2

Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single N

HYA026N08NS1C2

模型

Huayi Microelectronics Co., Ltd.