Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single N

HY2N7002E

HY2N7002E

The N-channel MOSFET in SOT23-3L package features VDS 60 V and RDS(on) 2.4 Ohm, using the Trench structure technology. It is suitable for LED applications, battery management system and other application fields.

Features

ROHS Compliant




Benefits


Stable technical capability




Applications


BMS

HY2N7002E

模型