Language
HYG032N03LR1C1
The N-channel MOSFET in DFN3*3-8L package features VDS 30 V and RDS(on) 3.3 Ohm, using the Trench structure technology. It is suitable for low-frequency applications, such as output protection and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Strong shock resistance
High reliability
Applications
BMS
AC-DC Power Supply
Power Output Protection
