Language
HY1606P
The N-channel MOSFET in TO-220FB-3L package features VDS 60 V and RDS(on) 10.4 Ohm, using the Trench structure technology. It is suitable for low-frequency applications, such as motor drives, battery management system and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Electric Vehicle Controller
BMS
LED Applications
