Language
HY1906B
The N-channel MOSFET in TO-263-2L package features VDS 60 V and RDS(on) 6.0 Ohm, using the Trench structure technology. It is suitable for low-frequency applications, such as motor drives, battery management system, inverter and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Motor Drives
BMS
Inverter
