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MOSFET Third-Generation Semiconductor IPM IGBT Application Scheme

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Single N

MOSFET
Third-Generation Semiconductor
IPM
IGBT
Application Scheme

HY3906W

HY3906W

This product has been discontinued，Please choose HYG015N06NS1W

HY3906WProduct Specification

Features

Low RDS(on)

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Benefits

Low conduction losses

Strong shock resistance

High reliability

Stable technical capability

Applicatons

Electric Vehicle Controller

BMS

Inverter

HY3906W

模型