Language
HY030N06C2
The N-channel MOSFET in PDFN8L(5x6) package features VDS 65 V and RDS(on) 2.4 Ohm, using the SGT structure technology. It is suitable for motor drives, battery management system, and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low conduction losses
Strong shock resistance
Outstanding thermal and dissipation capability
High reliability
Stable technical capability
Applications
BMS
