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MOSFET Third-Generation Semiconductor IPM IGBT Application Scheme

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Single N

MOSFET
Third-Generation Semiconductor
IPM
IGBT
Application Scheme

HY1001D

HY1001D

This product has been discontinued，Please choose HYG065N07NS1P

HY1001DProduct Specification

Features

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advantage

Low conduction losses

Strong shock resistance

Stable technical capability

High reliability

Application Fields

Battery management system

LED power panel

HY1001D

模型