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MOSFET Third-Generation Semiconductor IPM IGBT Application Scheme

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Single N

MOSFET
Third-Generation Semiconductor
IPM
IGBT
Application Scheme

HY3306B

HY3306B

This product has been discontinued，Please choose HYG025N06LS1B

HY3306BProduct Specification

Features

Low RDSON

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advantage

Low conduction losses

Strong shock resistance

Stable technical capability

High reliability

Application Fields

Electric vehicle controller

UPS

BMS

Inverter

HY3306B

模型