Language
HYG016N04LS1P
The N-channel MOSFET in TO-220FB-3L package features VDS 40 V and RDS(on) 1.4 Ohm, using the SGT structure technology. It is suitable for such as DC-DC , inverter and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low conduction losses
Low switch losses
Stable technical capability
Applications
DC-DC
Inverter
