Language
HYG016N04LS1B
The N-channel MOSFET in TO-263-2L package features VDS 40 V and RDS(on) 1.4 Ohm, using the SGT structure technology. It is suitable for such as DC-DC, battery management system, inverter and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
ROHS Compliant
100% DVDS Tested
100% UILTested
Benefits
Stable technical capability
Low conduction losses
Low conduction losse
High reliability
Applications
BMS
DC-DC
Inverter
