Language
HYG023N04LS1B
The N-channel MOSFET in TO-263-2L package features VDS 40 V and RDS(on) 2.1 Ohm, using the SGT structure technology. It is suitable for DC-DC, power tools and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low conduction losses
Low switch losses
High reliability
Stable technical capability
Applications
DC-DC
Power Tools
