Language
HYG090N06LS1C1
The N-channel MOSFET in DFN3*3 package features VDS 60 V and RDS(on) 8.2 Ohm, using the SGT structure technology. It is suitable for such as Power delivery, wireless charger, DC-DC and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Low switch losses
Outstanding thermal and dissipation capability
High reliability
Stable technical capability
E-Installation
Applications
PD Delivery
Wireless Charger
DC-DC
