Language
HYG009N04LS1C2
The N-channel MOSFET in PDFN8L（5x6） package features VDS 40 V and RDS(on) 0.75 Ohm, using the SGT structure technology. It is suitable for motor drives, battery management system and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Applications
BMS
Motor Drives
