Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single N

HYG045N04LA1D

HYG045N04LA1D

The N-channel MOSFET in TO-252-2L package features VDS 40 V and RDS(on) 4.5 Ohm, using the Trench structure technology. It is suitable for battery management system application fields.

Features


Low RDS(on) 

ROHS Compliant

100% DVDS Tested

100% UIL Tested





Benefits


Low conduction losses 

Strong shock resistance

High reliability

Stable technical capability





Applications

BMS   

HYG045N04LA1D

模型