Language
HYG045N04LA1D
The N-channel MOSFET in TO-252-2L package features VDS 40 V and RDS(on) 4.5 Ohm, using the Trench structure technology. It is suitable for battery management system application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
BMS
