Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single N

HYG012N03LR1B

HYG012N03LR1B

The N-channel MOSFET in TO-263-2L package features VDS 30 V and RDS(on) 1.2 Ohm, using the Trench structure technology. It is suitable for battery management system and other application fields.

Features


Low RDS(on)

ROHS Compliant

100% DVDS Tested

100% UIL Tested





Benefits


Low conduction losses  

Strong shock resistance 

High reliability

Stable technical capability





Applications

BMS   

HYG012N03LR1B

模型