Language
HYG011N04LS1C2
The N-channel MOSFET in PDFN8L（5x6）package features VDS 40 V and RDS(on) 1.1 Ohm, using the SGT structure technology. It is suitable for electronic speed controller, power tools， battery management system, high-frequency DC-DC converter and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Strong shock resistance
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Applications
BMS
DC-DC
Power tools
