Language
HYG011N04LS1B6
The N-channel MOSFET in TO-263-6L package features VDS 40 V and RDS(on) 1.1 Ohm, using the SGT structure technology. It is suitable for battery management system, power tools and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Strong shock resistance
utstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Applications
BMS
Power Tools
