Language
HYG025N06LS2B
The N-channel MOSFET in TO-263-2L package features VDS 60 V and RDS(on) 2.8 Ohm, using the SGT structure technology. It is suitable for low-frequency applications, such as synchronous rectification, motor drives, high-frequency DC-DC converter and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
Benefits
Low conduction losses
High reliability
Stable technical capability
Applications
BMS
DC-DC
