Language
HYG012N03LR1C2
The N-channel MOSFET in PDFN8L(5x6) package features VDS 30 V and RDS(on) 0.9 Ohm, using the Trench structure technology. It is suitable for battery management system application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benenfits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
BMS
