Language
HYG650N10LS1D
The N-channel MOSFET in TO-252-2L package features VDS 100 V and RDS(on) 51 Ohm, using the SGT structure technology. It is suitable for such as POE, LED, DC-DC converter and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low switch losses
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Applications
DC-DC
LED
