Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single N

HYG650N10LS1D

HYG650N10LS1D

The N-channel MOSFET in TO-252-2L package features VDS 100 V and RDS(on) 51 Ohm, using the SGT structure technology. It is suitable for such as POE, LED, DC-DC converter and other application fields.

Features

Low RDS(on) 

ROHS Compliant

100% DVDS Tested

100% UIL Tested





Benefits

Low switch  losses

Outstanding thermal and dissipation capability

High reliability

High power density

Stable technical capability





Applications

DC-DC

LED

HYG650N10LS1D

模型