Language
HYG085N04LA1D
The N-channel MOSFET in TO-252-2L package features VDS 40 V and RDS(on) 7 Ohm, using the Trench structure technology. It is suitable for Power Delivery, , battery management system, VBUS protection and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benenfits
Low conduction losses
High reliability
Stable technical capability
Applications
BMS
VBUS Protection
