Language
HYG025N06LS1B6
The N-channel MOSFET in TO-263-6L package features VDS 60 V and RDS(on) 2.3 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as high-frequency DC-DC converter, battery management system and other application fields.
Features
Low RDS(on
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Applications
BMS
