Language
HYG009N03LS1C2
The N-channel MOSFET in PDFN8L（5x6） package features VDS 30 V and RDS(on) 1.1 Ohm, using the SGT structure technology. It is suitable for high-frequency applications, such as Electronic Speed Controller (ESC), Power Tools, Battery Management System (BMS),high-frequency DC-DC converter and other application fields.
Streatures
Low RDS(on)
Outstanding Gate Charge
ROHS Compliant
Benefits
Outstanding thermal and dissipation capability
High power density
Applications
BMS DC-DC Power Tools
