Language
HYG030N03LQ1D
The N-channel MOSFET in DPAK package features VDS 30 V and RDS(on) 2.5 Ohm, using the Trench structure technology. It is suitable for battery management system and other application fields.
Streatures
Low RDS(on)
ROHS Compliant
benefits
Outstanding thermal and dissipation capability
High power density
Applacations
BMS
