Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single N

HYG013N04NA1P

HYG013N04NA1P

The N-channel MOSFET in TO-220FB-3L package features VDS 40 V and RDS(on) 1.3 Ohm, using the Trench structure technology. It is suitable for battery management system and other application fields.

Streatures

Low RDS(on)

ROHS Compliant

100% DVDS Tested

100% UIL Tested




Benefits

Strong shock resistance

Stable technical capability



Applacations

BMS   

HYG013N04NA1P

模型