Language
HYG053N10NS1B
The parameters of this device are 100V ,4.8mΩand TO-263-2L, using the SGT structure technology. It is suitable for battery management system,motor drives and other application fields.
Streatures
Low RDS(on)
Outstanding Gate Charge
ROHS Compliant
Benefits
Low conduction losses
Outstanding thermal and dissipation capabilit
Lower drive loss
Applacations
BMS Electric Vehicle Controller
