Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG086P06LA1B

HYG086P06LA1B

The P-channel MOSFET in TO-263-2L package features VDS -60 V and RDS(on) 7.4 Ohm, using the Trench structure technology. It is suitable for anti-reverse connection circuit, battery management system and other application fields.

Features


ROHS Compliant

100% DVDS Tested

100% UIL Tested





Benefits


High reliability

Stable technical capability




Applications


BMS

HYG086P06LA1B

模型