Language
HYG045P03LQ1B
The P-channel MOSFET in TO-263-2L package features VDS -30 V and RDS(on) 4.1 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as motor drives, battery management system, load switch and other application fields.
Features
Low RDS(on)
Outstanding FOM
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Lower drive loss
E-Installation
Applications
BMS
Load Switch
