Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG045P03LQ1P

HYG045P03LQ1P

The P-channel MOSFET in TO-220FB-3L package features VDS -30 V and RDS(on) 4.1 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


Low RDS(on)

Outstanding FOM

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advanced Technology  





Benefits


Low conduction losses 

Strong shock resistance

Outstanding thermal and dissipation capability

High reliability

High power density

Stable technical capability

Lower drive loss

E-Installation




Applications


BMS

Load Switch

HYG045P03LQ1P

模型