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HYG045P03LQ1P
The P-channel MOSFET in TO-220FB-3L package features VDS -30 V and RDS(on) 4.1 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.
Features
Low RDS(on)
Outstanding FOM
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Lower drive loss
E-Installation
Applications
BMS
Load Switch
