Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG240P02KA1C6

HYG240P02KA1C6

The P-channel MOSFET in DFN6L(0202) package features VDS -20 V and RDS(on) 13.8 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, e-cigarettes and other application fields.

Features


Low RDS(on)

Low FOM

Outstanding Gate Charge

Low input Capacitance

ROHS Compliant

Efficiency Improvement

Advanced Technology





Benefits


Low conduction losses

Strong shock resistance

High reliability

Stable technical capability

Lower drive loss




Applications


Load Switch

DC-DC

HYG240P02KA1C6

模型