Language
HYG080P02KQ1C1
The P-channel MOSFET in DFN8L(0303) package features VDS -20 V and RDS(on) 6.9 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch， battery management system, "e-cigarettes and other application fields.
Features
Low RDS(on)
ROHS Compliant
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Load Switch
DC-DC
BMS
