Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG080P02KQ1D

HYG080P02KQ1D

The P-channel MOSFET in TO-252-2L package features VDS -20 V and RDS(on) 6.9 Ohm, using the Trench structure technology. It has strong resistance and is suitable for low-frequency applications, such as load switch, battery management system, e-cigarettes and other application fields.

Features


Low RDS(on)

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Efficiency Improvement

Advanced Technology




Benefits


Low conduction losses

Strong shock resistance

High reliability

Stable technical capability




Applications


Load Switch

DC-DC

BMS

  

HYG080P02KQ1D

模型