Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG260P03LR1S

HYG260P03LR1S

The P-channel MOSFET in SOP8L package features VDS -30 V and RDS(on) 21.6 Ohm, using the Trench structure technology. It is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


Low RDS(on)

ROHS Compliant

Efficiency Improvement

Advanced Technology  




Benefits


Low conduction losses 

Strong shock resistance

Outstanding thermal and dissipation capability

Stable technical capability 

Lower drive loss




Applications


Load Switch

DC-DC

BMS

  

HYG260P03LR1S

模型