Language
HYG260P03LR1S
The P-channel MOSFET in SOP8L package features VDS -30 V and RDS(on) 21.6 Ohm, using the Trench structure technology. It is suitable for low-frequency applications, such as load switch, battery management system and other application fields.
Features
Low RDS(on)
ROHS Compliant
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
Outstanding thermal and dissipation capability
Stable technical capability
Lower drive loss
Applications
Load Switch
DC-DC
BMS
