Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HY12P03S

HY12P03S

The P-channel MOSFET in SOP8L package features VDS -30 V and RDS(on) 10.8 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


Low RDS(on) 

Low FOM

Outstanding Gate Charge

ROHS Compliant

Efficiency Improvement

Advanced Technology 




Benefits


Low conduction losses

Strong shock resistance

High reliability

Stable technical capability

Lower drive loss



Applications


Load Switch

DC-DC

BMS

HY12P03S

模型