Language
HYG260P03LR1C1
The P-channel MOSFET in DFN8L(0303) package features VDS -30 V and RDS(on) 21 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.
Features
Low RDS(on)
Outstanding Gate Charge
Low input Capacitance
ROHS Compliant
Efficiency Improvement
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Lower drive loss
Applications
Load Switch
DC-DC
BMS
