Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG065P03LQ1C2

HYG065P03LQ1C2

The P-channel MOSFET in PDFN8L(5x6) package features VDS -30 V and RDS(on) 5.9 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advanced Technology




Benefits


Low conduction losses 

Strong shock resistance

High reliability

Stable technical capability




Applications


DC-DC

BMS

HYG065P03LQ1C2

模型