Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG065P03LQ1D

HYG065P03LQ1D

The P-channel MOSFET in TO-252-2L package features VDS -30 V and RDS(on) 5.9 Ohm, using the Trench structure technology. It has strong shock resisitance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


ROHS Compliant

100% DVDS Tested

100% UIL Tested



Benefits


Low conduction losses

Strong shock resistance 

High reliability

Stable technical capability



Applications


Load Switch

DC-DC

BMS

  

HYG065P03LQ1D

模型