Language
HYG025P03LQ1B
The P-channel MOSFET in TO-263-2L package features VDS -30 V and RDS(on) 2.3 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Load Switch
DC-DC
BMS
