Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG025P03LQ1B

HYG025P03LQ1B

The P-channel MOSFET in TO-263-2L package features VDS -30 V and RDS(on) 2.3 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


Low RDS(on) 

ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advanced Technology



Benefits


Low conduction losses 

Strong shock resistance 

High reliability

Stable technical capability 




Applications


Load Switch

DC-DC

BMS

HYG025P03LQ1B

模型