Language
HYG110P04LQ2S
The P-channel MOSFET in SOP8L package features VDS -40 V and RDS(on) 11 Ohm, using the Trench structure technology. It has strong resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.
Features
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Load Switch
DC-DC
BMS
