Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG110P04LQ2S

HYG110P04LQ2S

The P-channel MOSFET in SOP8L package features VDS -40 V and RDS(on) 11 Ohm, using the Trench structure technology. It has strong resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


ROHS Compliant

100% DVDS Tested

100% UIL Tested




Benefits


Low conduction losses

Strong shock resistance

High reliability

Stable technical capability



 


Applications


Load Switch

DC-DC

BMS

HYG110P04LQ2S

模型