Language
HYG110P04LQ2C2
The P-channel MOSFET in PDFN8L(5x6) package features VDS -40 V and RDS(on) 9.0 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Advanced Technology
Benefits
Low conduction losses
Strong shock resistance
High reliability
Stable technical capability
Applications
Load Switch
DC-DC
BMS
