Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG110P04LQ2D

HYG110P04LQ2D

The P-channel MOSFET in TO-252-2L package features VDS -40 V and RDS(on) 9.4 Ohm, using the Trench structure technology. It has strong shock resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


Low RDS(on)

ROHS Compliant

100% DVDS Tested

100% UIL Tested

 Advanced Technology 




Benefits


Low conduction losses

Strong shock resistance

High reliability

Stable technical capability



Applications


Load Switch 

DC-DC

BMS

HYG110P04LQ2D

模型