Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG210P06LQ1D

HYG210P06LQ1D

The P-channel MOSFET in TO-252-2L package features VDS -60 V and RDS(on) 19 Ohm, using the Trench structure technology. It has strong resistance and is suitable for low-frequency applications, such as load switch, battery management system and other application fields.

Features


ROHS Compliant

100% DVDS Tested

100% UIL Tested

Advanced Technology




Benefits


Low conduction losses 

Strong shock resistance

High reliability

Stable technical capability


 


Applications


Load Switch

DC-DC Power Supplies

 

HYG210P06LQ1D

模型