Language
HY12P03C1
The P-channel MOSFET in DFN3*3_8L package features VDS -30 V and RDS(on) 10.5 Ohm, using the Trench structure technology. It is suitable for battery management system and other application fields.
Features
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
High reliability
Stable technical capability
Applications
BMS
