Language
HYG190P13NA1B
The P-channel MOSFET in TO-263-2L package features VDS -125 V and RDS(on) 18 Ohm, using the Trench structure technology. It is suitable for such as anti-reverse connection circuit, battery management system, DC-DC and other application fields.
Features
Low RDS(on)
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Strong shock resistance
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Applications
Anti-reverse Connection Circuit
BMS
DC-DC
