Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

 HYG190P13NA1B

HYG190P13NA1B

The P-channel MOSFET in TO-263-2L package features VDS -125 V and RDS(on) 18 Ohm, using the Trench structure technology. It is suitable for such as anti-reverse connection circuit, battery management system, DC-DC and other application fields.

Features


Low RDS(on)

ROHS Compliant

100% DVDS Tested

100% UIL Tested






Benefits


Strong shock resistance

Outstanding thermal and dissipation capability

High reliability

High power density

Stable technical capability






Applications

 Anti-reverse Connection Circuit

BMS

DC-DC

 HYG190P13NA1B

模型