Products & Scheme

We can provide complete scheme includes assembly design, assembly, electrical test and reliability test.

Single P

HYG350P13NA1P

HYG350P13NA1P

The P-channel MOSFET in TO-220FB-3L package features VDS 125 V and RDS(on) 33 Ohm, using the Trench structure technology. It is suitable for anti-theft alarm and other application fields.

Features


ROHS Compliant

100% DVDS Tested

100% UIL Tested





Benefits


Strong shock resistance

Outstanding thermal and dissipation capability

High reliability

High power density

Stable technical capability 




Applications

Anti-theft Alarm

HYG350P13NA1P

模型