Language
HYG350P13NA1P
The P-channel MOSFET in TO-220FB-3L package features VDS 125 V and RDS(on) 33 Ohm, using the Trench structure technology. It is suitable for anti-theft alarm and other application fields.
Features
ROHS Compliant
100% DVDS Tested
100% UIL Tested
Benefits
Strong shock resistance
Outstanding thermal and dissipation capability
High reliability
High power density
Stable technical capability
Applications
Anti-theft Alarm
